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参数资料
| 型号： | HMBT9014 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/5页 |
| 文件大小： | 60K |
| 代理商： | HMBT9014 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT9014
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200212
Issued Date : 2002.07.01
Revised Date : 2004.09.08
Page No. : 1/5
HMBT9014
HSMC Product Specification
Description
The HMBT9014 is designed for use in pre-amplifier of low level and low noise.
Features
High Total Power Dissipation (P
D
: 225mW)
Complementary to HMBT9015
High hFE and Good Linearity
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 50 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 45 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 5 V
I
C
Collector Current........................................................................................................................................ 100 mA
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
V
BE(on)
*h
FE
Cob
f
T
Min.
50
45
5
-
-
-
-
0.58
100
-
150
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
2.20
270
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=1mA
V
CB
=10V, f=1MHz, I
E
=0
V
CE
=5V, I
C
=10mA
pF
MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification on hFE
Rank (Marking Code)
Range
B (C4B)
100-300
C (C4C)
200-600
D (C4D)
400-1000
SOT-23
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