- 您现在的位置：买卖IC网 > PDF目录381908 > HMBT9018 (HSMC CORP.) NPN EPITAXIAL PLANAR TRANSISTOR PDF资料下载
参数资料
| 型号： | HMBT9018 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 50K |
| 代理商： | HMBT9018 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT9018
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200221
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 1/4
HMBT9018
HSMC Product Specification
Description
The HMBT9018 is designed for use in VHF & UHF oscillators and VHF mixer in
tuner of a TV receiver.
Features
High frequency
Very low capacitance
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage........................................................................................................................... 25 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 15 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 3 V
I
C
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
V
BE(on)
*h
FE
Cob
f
T
Min.
25
15
3
-
-
-
-
72
-
650
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
0.95
146
0.7
-
Unit
V
V
V
nA
nA
mV
V
Test Conditions
I
C
=100uA
I
C
=1mA
I
C
=10uA
V
CB
=20V
V
EB
=2V
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, f=1MHz
V
CB
=10V, I
C
=4mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
Classification Of hFE
Rank
hFE
G
H
72-108
97-146
SOT-23
相关PDF资料 |
PDF描述 |
|---|---|
| HMBTA06 | NPN SILICON TRANSISTOR |
| HMBTA13 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBTA92 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBTA94 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBTH10 | NPN EPITAXIAL PLANAR TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMBTA06 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN SILICON TRANSISTOR |
| HMBTA13 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBTA14 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBTA42 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITACIAL PLANAR TRANSISTOR |
| HMBTA44 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。