参数资料
型号: HMBT9018
厂商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶体管
文件页数: 2/4页
文件大小: 50K
代理商: HMBT9018
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200221
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 2/4
HMBT9018
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
0.1
1
10
100
Collector Current-I
C
(mA)
h
hFE @ V
CE
=5V
Current Gain & Collector Current
10
100
1000
0.1
1
10
100
Collector Current-I
C
(mA)
h
hFE @ V
CE
=10V
Saturation Voltage & Collector Current
10
100
1000
0.1
1
10
100
Collector Current-I
C
(mA)
S
V
CE(sat)
@ I
C
=10I
B
On Voltage & Collector Current
100
1000
0.1
1
10
100
Collector Current-I
C
(mA)
O
V
BE(on)
V
CE
=10V
Cutoff Frequency & Collector Current
0.1
1
10
100
1000
10000
1
10
100
Collector Current-I
C
(mA)
C
fT @ V
CE
=10V
Capacitance & Reverae-Biased Voltage
0.1
1
10
0.1
1
10
100
Reverae Biased Voltage (V)
C
COb
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