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参数资料
| 型号： | HMBTA06 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | HMBTA06 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA06
NPN SILICON TRANSISTOR
Spec. No. : HE6840
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBTA06
HSMC Product Specification
Description
Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 4 V
IC Collector Current........................................................................................................ 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
80
80
4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.25
1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=1mA
IE=100uA
VCB=80V
VCE=60V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
SOT-23
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