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参数资料
| 型号： | HMBTA13 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 31K |
| 代理商： | HMBTA13 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA13
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2002.12.27
Page No. : 1/4
HMBTA13
HSMC Product Specification
Description
Darlington Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Thermal Resistance
Junction To Ambient R
θ
ja............................................................................................ 556
o
C/W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage............................................................................................ 10 V
IC Collector Current........................................................................................................ 300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
5K
10K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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