- 您现在的位置：买卖IC网 > PDF目录381908 > HMBT8550 (HSMC CORP.) PNP EPITAXIAL PLANAR TRANSISTOR PDF资料下载
参数资料
| 型号： | HMBT8550 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 30K |
| 代理商： | HMBT8550 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8550
PNP EPITAXIAL TRANSISTOR
Spec. No. : HE6813
Issued Date : 1997.08.11
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8550
HSMC Product Specification
Description
The HMBT8550 is designed for general purpose amplifier
applications.
Features
High DC Current: hFE=150-400 at IC=150mA
Complementary to HMBT8050
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -25 V
VCEO Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
ft
Cob
Min.
-25
-20
-5
-
-
-
-
100
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-100
-500
-1
500
-
10
Unit
V
V
V
uA
nA
mV
V
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VEB=-6V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
Range
B9C
100-200
B9D
150-300
B9E
250-500
SOT-23
相关PDF资料 |
PDF描述 |
|---|---|
| HMBT8599 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT9014 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT9018 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBTA06 | NPN SILICON TRANSISTOR |
| HMBTA13 | NPN EPITAXIAL PLANAR TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMBT8599 | 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT9014 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT9018 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBTA06 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN SILICON TRANSISTOR |
| HMBTA13 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。