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参数资料
| 型号： | HMBT8099 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | HMBT8099 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8099
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6826
Issued Date : 1993.10.27
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8099
HSMC Product Specification
Description
Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
80
80
6
-
-
-
-
-
600
100
100
75
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
100
400
300
800
300
-
-
-
6
Unit
V
V
V
nA
nA
nA
mV
mV
mV
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=80V
VCE=60V
VEB=6V
IC=100mA, IB=5mA
IC=100mA, IB=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
SOT-23
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