参数资料
型号: HMBT5087
厂商: HSMC CORP.
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 进步党外延平面晶体管
文件页数: 1/3页
文件大小: 28K
代理商: HMBT5087
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5087
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6850
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5087
HSMC Product Specification
Description
The HMBT5087 is designed for low noise, high gain, general purpose
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage.............................................................................................. -3V
IC Collector Current ........................................................................................................ -50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO1
ICBO2
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-50
-50
-3
-
-
-
-
250
250
250
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-300
-850
800
-
-
-
4.0
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-10V
VCB=-35V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-0.5mA, f=100MHz
VCB=-5V, f=100KHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
MHz
pF
SOT-23
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