参数资料
型号: HMBT5088
厂商: HSMC CORP.
英文描述: Carbon Composition Resistor; Series:OA; Resistance:39ohm; Resistance Tolerance: 10%; Power Rating:1W; Resistor Element Material:Carbon Compound; Voltage Rating:1000VDC; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 瑞展晶体管
文件页数: 1/3页
文件大小: 29K
代理商: HMBT5088
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5088
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6824
Issued Date : 1993.08.27
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5088
HSMC Product Specification
Description
The HMBT5088 is designed for low noise, high gain, general purpose
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipations
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 35 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
35
30
4.5
-
-
-
-
300
350
300
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
500
800
900
-
-
-
4
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=20V
VEB=3V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
MHz
pF
SOT-23
相关PDF资料
PDF描述
HMBT5089 NPN EPITAXIAL PLANAR TRANSISTOR
HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR
HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages )
HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR
HMBT6429 NPN EPITAXIAL PLANAR TRANSISTOR
相关代理商/技术参数
参数描述
HMBT5089 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HMBT5401 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HMBT5551 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages )
HMBT6427 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR