参数资料
型号: HMC-ABH241
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 50000 MHz - 66000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 3.20 X 1.42 MM, 0.10 MM HEIGHT, DIE-14
文件页数: 1/6页
文件大小: 220K
代理商: HMC-ABH241
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
v02.0209
General Description
Features
Functional Diagram
Output IP3: +25 dBm
P1dB: +17 dBm
Gain: 24 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.2 x 1.42 x 0.1 mm
Electrical Specifications
, T
A = +25° C,
Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220 mA [2]
Typical Applications
This HMC-ABH241 is ideal for:
Short Haul / High Capacity Links
Wireless LAN Bridges
Military & Space
The HMC-ABH241 is a four stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
50 and 66 GHz. The HMC-ABH241 provides 24 dB
of gain, and an output power of +17 dBm at 1dB
compression from a +5V supply voltage. All bond pads
and the die backside are Ti/Au metallized and the
amplifier device is fully passivated for reliable operation.
The HMC-ABH241 GaAs HEMT MMIC Medium
Power Amplifier is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
HMC-ABH241
Parameter
Min.
Typ.
Max.
Units
Frequency Range
50 - 66
GHz
Gain
19
24
dB
Input Return Loss
15
dB
Output Return Loss
15
dB
Output Power for 1 dB Compression (P1dB)
17
dBm
Output Third Order Intercept (IP3)
25
dBm
Saturated Output Power (Psat)
19
dBm
Supply Current (Idd1 + Idd2 + Idd3)
220
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve Idd
total = 220 mA
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