- 您现在的位置：买卖IC网 > PDF目录65464 > HMC-ALH216 (HITTITE MICROWAVE CORP) 14000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC-ALH216 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 14000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.25 X 1.58 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 1/6页 |
| 文件大小： | 184K |
| 代理商： | HMC-ALH216 |
L
O
W
N
O
IS
E
A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
v03.0209
General Description
Features
Functional Diagram
Noise Figure: 2.5 dB @ 20 GHz
Gain: 18 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Electrical Specifications*
, T
A = +25° C, Vdd= +4V
Typical Applications
This HMC-ALH216 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
Test Instrumentation
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Amplifier die which operates between 14
and 27 GHz. The amplifier provides 18 dB of gain,
2.5 dB noise figure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 amplifier
is
ideal
for
integration
into
Multi-Chip-Modules
(MCMs) due to its small size.
HMC-ALH216
Parameter
Min.
Typ.
Max.
Units
Frequency Range
14 - 27
GHz
Gain
14
18
dB
Gain Variation over Temperature
0.02
dB / °C
Noise Figure
2.7
4.5
dB
Input Return Loss
15
dB
Output Return Loss
15
dB
Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.)
90
mA
*Unless otherwise indicated, all measurements are from probed die
相关PDF资料 |
PDF描述 |
|---|---|
| HMC-ALH244 | 24000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH310 | 37000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH311 | 22000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH382 | 57000 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH435 | 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-ALH216-E | 功能描述:RF Amplifier IC General Purpose 14GHz ~ 27GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:过期 频率:14GHz ~ 27GHz P1dB:14dBm 增益:18dB 噪声系数:2.7dB RF 类型:通用 电压 - 电源:4V 电流 - 电源:90mA 测试频率:14GHz ~ 27GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:1 |
| HMC-ALH216-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:14GHz ~ 27GHz P1dB:14dBm 增益:18dB 噪声系数:2.7dB RF 类型:通用 电压 - 电源:4V 电流 - 电源:90mA 测试频率:14GHz ~ 27GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-ALH244 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz |
| HMC-ALH244_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz |
| HMC-ALH310 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
发布紧急采购，3分钟左右您将得到回复。