- 您现在的位置：买卖IC网 > PDF目录65464 > HMC-ALH382 (HITTITE MICROWAVE CORP) 57000 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC-ALH382 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 57000 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.55 X 0.73 MM, 0.10 MM HEIGHT, DIE-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 443K |
| 代理商： | HMC-ALH382 |
A
m
p
li
f
ie
r
s
-
l
o
w
n
o
is
e
-
C
h
ip
1
1 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
v03.1210
General Description
Features
Functional Diagram
noise figure: 3.8 dB
p1dB: +12 dBm
Gain: 21 dB
supply Voltage: +2.5V
50 ohm matched input/output
Die size: 1.55 x 0.73 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd = 2.5V, Idd = 64 mA*
Typical Applications
This hmC-Alh382 is ideal for:
Short Haul / High Capacity Links
Wireless LANs
Military & Space
The hmC-Alh382 is a high dynamic range, four
stage GaAs hemT mmiC low noise Amplifier
(lnA) which operates between 57 and 65 Ghz. The
hmC-Alh382 features 21 dB of small signal gain,
4 dB of noise figure and an output power of +12
dBm at 1dB compression from a +2.5V supply
voltage. All bond pads and the die backside are Ti/
Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile lnA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 ohm environment and
contacted with rf probes.
HMC-ALH382
parameter
min.
Typ.
max.
Units
frequency range
57 - 65
Ghz
Gain
19
21
dB
noise figure
4
5.5
dB
input return loss
12
dB
output return loss
10
dB
output power for 1 dB Compression (p1dB)
12
dBm
supply Current (idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
64
100
mA
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve iddtotal = 64 mA
相关PDF资料 |
PDF描述 |
|---|---|
| HMC-ALH435 | 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH482 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-APH460 | 27000 MHz - 31500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-APH462 | 15000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-APH596 | 16000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-ALH382_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz |
| HMC-ALH435 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz |
| HMC-ALH435-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:5GHz ~ 20GHz P1dB:16dBm 增益:13dB 噪声系数:2.2dB RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:30mA 测试频率:5GHz ~ 20GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-ALH444 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
| HMC-ALH444_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
发布紧急采购，3分钟左右您将得到回复。