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参数资料
| 型号： | HMC-ALH382 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 57000 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.55 X 0.73 MM, 0.10 MM HEIGHT, DIE-4 |
| 文件页数： | 4/6页 |
| 文件大小： | 443K |
| 代理商： | HMC-ALH382 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
noTes:
1. All Dimensions Are in inChes [mm].
2. TYpiCAl BonD pAD is .004” sQUAre.
3. BACKsiDe meTAlliZATion: GolD.
4. BACKsiDe meTAl is GroUnD.
5. BonD pAD meTAlliZATion: GolD.
6. ConneCTion noT reQUireD for UnlABeleD BonD pADs.
7. oVerAll Die siZe ±.002”
HMC-ALH382
v03.1210
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Die Packaging Information [1]
standard
Alternate
GP-5 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
pad number
function
Description
interface schematic
1
rfin
This pad is AC coupled
and matched to 50 ohms.
2
rfoUT
This pad is AC coupled
and matched to 50 ohms.
3
Vdd
power supply Voltage for the amplifier. see assembly for
required external components.
4
Vgg
Gate control for amplifier. please follow “mmiC Amplifier Bias-
ing procedure” application note. see assembly for required
external components.
Die bottom
GnD
Die bottom must be connected to rf/DC ground.
Pad Descriptions
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PDF描述 |
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| HMC-ALH435 | 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH482 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-APH460 | 27000 MHz - 31500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-APH462 | 15000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-APH596 | 16000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-ALH382_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz |
| HMC-ALH435 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz |
| HMC-ALH435-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:5GHz ~ 20GHz P1dB:16dBm 增益:13dB 噪声系数:2.2dB RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:30mA 测试频率:5GHz ~ 20GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-ALH444 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
| HMC-ALH444_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
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