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参数资料
| 型号： | HMC-ALH435 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.48 X 0.90 MM, 0.10 MM HEIGHT, DIE-5 |
| 文件页数： | 1/6页 |
| 文件大小： | 204K |
| 代理商： | HMC-ALH435 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
v03.1009
General Description
Features
Functional Diagram
Noise Figure: 2.2 dB @ 12 GHz
Gain: 13 dB @ 14 GHz
P1dB Output Power: +16 dBm @ 12 GHz
Supply Voltage: +5V @ 30 mA
Die Size: 1.48 x 0.9 x 0.1 mm
Electrical Specifications
, T
A = +25° C, Vdd= +5V
Typical Applications
This HMC-ALH435 is ideal for:
Wideband Communication Systems
Surveillance Systems
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
Test Instrumentation
VSAT
The HMC-ALH435 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 5
and 20 GHz. The amplifier provides 13 dB of gain,
2.2 dB noise figure at 12 GHz and +16 dBm of output
power at 1 dB gain compression while requiring only
30 mA from a +5V supply voltage. The HMC-ALH435
amplifier is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
HMC-ALH435
Parameter
Min.
Typ.
Max.
Units
Frequency Range
5 - 20
GHz
Gain
10
13
dB
Gain Variation over Temperature
0.02
dB / °C
Noise Figure
2.2
2.6
dB
Input Return Loss
5dB
Output Return Loss
10
dB
Output IP3
25
dBm
Output Power for 1 dB Compression
16
dBm
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
30
mA
*Unless otherwise indicated, all measurements are from probed die
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-ALH435-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:5GHz ~ 20GHz P1dB:16dBm 增益:13dB 噪声系数:2.2dB RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:30mA 测试频率:5GHz ~ 20GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-ALH444 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
| HMC-ALH444_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
| HMC-ALH444-SX | 功能描述:RF Amplifier IC VSAT, DBS 1GHz ~ 12GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:1GHz ~ 12GHz P1dB:19dBm 增益:17dB 噪声系数:1.5dB RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:55mA 测试频率:1GHz ~ 12GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-ALH445 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz |
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