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参数资料
| 型号： | HMC-APH608 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 22500 MHz - 26500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4.49 X 1.31 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 1/6页 |
| 文件大小： | 200K |
| 代理商： | HMC-APH608 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
v03.0409
General Description
Features
Functional Diagram
Output IP3: +40 dBm
P1dB: +30 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
Typical Applications
This HMC-APH608 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
The HMC-APH608 is a high dynamic range, two stage
GaAs HEMT MMIC 1 Watt Power Amplifier which
operates between 22.5 and 26.5 GHz. The HMC-
APH608 provides 17 dB of gain, and an output power
of +30 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH608 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data Shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-APH608
Electrical Specifications[1]
, T
A = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA
[2]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
22.5 - 26.5
24 - 26.5
GHz
Gain
14.5
17
16
17
dB
Input Return Loss
8
11
dB
Output Return Loss
9
12
dB
Output power for 1dB Compression (P1dB)
27
30
28
30
dBm
Output Third Order Intercept (IP3)
36
39
37
40
dBm
Supply Current (Idd1+Idd2)
950
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
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| HMC-APH608-SX | 功能描述:IC MMIC POWER AMP DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:22.5GHz ~ 26.5GHz P1dB:30dBm 增益:17dB 噪声系数:- RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:950mA 测试频率:22.5GHz ~ 26.5GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-APH633 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz |
| HMC-APH634 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz |
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| HMC-AUH232 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz |
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