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参数资料
| 型号： | HMC-AUH249 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.20 X 1.80 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 7/8页 |
| 文件大小： | 2301K |
| 代理商： | HMC-AUH249 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 mil diameter wire bonds are used on vgg1 and vgg2 connections to the capacitors and 27Ω resistors.
0.5mil x 3mil ribbon bonds are used on rF connections
capacitors and resistors on vgg1 and vgg2 are used to filter low frequency, <800Mhz, rF pickup
35Ω and 50Ω resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high
frequency termination.
For best gain flatness and group delay variation, eccosorb can be epoxied on the transmission line
covering the center 3/4 of the transmission line length. eccosorb may also be placed partially across the
res1 pad and 35Ω resistor for improved gain flatness and group delay variation.
(The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple)
silver-filled conductive epoxy is used for die attachment
(Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias)
Device Operation
Device Mounting
these devices are susceptible to damage from electrostatic discharge. proper precautions should be observed
during handling, assembly and test.
the input to this device should be ac-coupled.
Device Power Up Instructions
1. Ground the device
2. Bring vgg1 to -0.5v (no vbias current)
3. Bring vgg2 to +1.5v (no vbias current)
4. Bring vdd to +5v (150ma to 225ma drain current)
(Initially the drain current (Vbias) will rise sharply with a small Vbias voltage, but will flatten out as Vbias
approaches 5V)
vgg1 should be varied between -1.0v and 0v to achieve 200ma current on the drain (vbias).
vbias may be increased to +5.5v if required to achieve greater output voltage swing.
vgg2 may be adjusted between +1.5v and +0.3v to vary the output voltage swing.
Device Power Down Instructions
1. reverse the sequence identified above in steps 1 through 4.
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
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| HMC-AUH312 | 500 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-C001 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-C009 | 4000 MHz - 8500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 9.5 dB CONVERSION LOSS-MAX |
| HMC-C013HV115 | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| HMC-C013HV230 | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-AUH249_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH256 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
| HMC-AUH256_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
| HMC-AUH312 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC-AUH317 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz |
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