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参数资料
| 型号： | HMC135 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 调制器/解调器 |
| 英文描述： | 1800 MHz - 5200 MHz RF/MICROWAVE BIPHASE MODULATOR, 11 dB CONVERSION LOSS-MAX |
| 封装： | 1.45 X 1.45 MM, 0.10 MM HEIGHT, DIE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 446K |
| 代理商： | HMC135 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC135
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz
v04.0909
General Description
Features
Functional Diagram
Chip Integrates Directly into MIC Designs
Carrier Suppression: 30 dB
Direct Modulation in the 1.8 - 5.2 GHz Band
Functions also as a Phase Detector
Die Size: 1.45 x 1.45 x 0.1 mm
Electrical Specifications, T
A = +25° C, 5 mA Bias Current
Typical Applications
The HMC135 is suitable for:
Wireless Local Loop
LMDS & VSAT
Point-to-Point Radios
Test Equipment
The HMC135 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and
180 degree states. Device input is at the RF port
and output is at the LO port. The polarity of the
bias current at the control port (IF port) defines the
phase states. Excellent amplitude and phase balance
provided by closely matched monolithic balun and
diode circuits delivers 30 dB of carrier suppression in
a tiny monolithic chip.
The device also functions as a demodulator or phase
comparator. As a demodulator, data emerges at the
control port when a modulated signal at the RF port
is compared to a reference signal at the LO port.
As a phase comparator, the phase angle between
two signals applied to the RF and LO ports is
represented by an analog voltage at the control port.
Except for carrier suppression, the data presented
here was measured under static conditions in which
a DC bias current (nominally 5 mA) is applied to the
control port.
Parameter
Min.
Typ.
Max.
Units
Frequency Band
1.8 - 5.2
GHz
Insertion Loss
911
dB
Return Loss, RF and LO Ports
2.5
3.0
dB
Amplitude Balance
0.2
0.5
dB
Phase Balance
2.5
5.0
Deg
Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p)
25
30
dBc
Input Power for 1 dB Compression
0
8
dBm
Third Order Intercept, Input
5
10
dBm
Second Order Intercept, Input
15
30
dBm
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V
at the control port).
25
10
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC135_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 1.8 - 5.2 GHz |
| HMC135_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 1.8 - 5.2 GHz |
| HMC136 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| HMC136_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| HMC136_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
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