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| 型号： | HMC230MS8E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 衰减器 |
| 英文描述： | 750 MHz - 2000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.1 dB INSERTION LOSS-MAX |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, MSOP-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 185K |
| 代理商： | HMC230MS8E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC230MS8 / 230MS8E
4 dB LSB GaAs MMIC 3-BIT DIGITAL
ATTENUATOR, 0.75 - 2.0 GHz
v02.0505
General Description
Features
Functional Diagram
4 dB LSB Steps to 28 dB
Single Positive Control Per Bit
±0.5 dB Typical Bit Error
Pin - For - Pin Replacement to
AA100-59 Digital Attenuator
Electrical Specifications,
T
A = +25° C, Vdd = +3V to +5V & Vctl = 0/Vdd (Unless Otherwise Stated)
Typical Applications
The HMC230MS8 & HMC230MS8E are broadband 3
- bit positive control GaAs IC digital attenuators in 8
lead MSOP surface mount plastic packages. Cover-
ing 0.75 to 2 GHz, the insertion loss is typically less
than 2 dB. The attenuator bit values are 4 (LSB), 8,
and 16 dB for a total attenuation of 28 dB. Accuracy
is excellent at ±0.5 dB typical with an IIP3 of up to
+48 dBm. Three bit control voltage inputs, toggled
between 0 and +3 to +5 volts, are used to select each
attenuation state at less than 50 uA each. A single
Vdd bias of +3 to +5 volts applied through an external
5K Ohm resistor is required.
The HMC230MS8 / HMC230MS8E is ideal for:
Cellular
PCS, ISM, MMDS
WLL Handset
Base Station Infrastructure
Parameter
Frequency
Min.
Typical
Max.
Units
Insertion Loss
0.75 - 1.7 GHz
1.7 - 2.0 GHz
1.6
1.8
2.1
dB
Attenuation Range
0.75 - 2.0 GHz
28
dB
Return Loss (RF1 & RF2, All Atten. States)
0.75 - 1.7 GHz
1.7 - 2.0 GHz
10
13
16
dB
Attenuation Accuracy: (Reference to Insertion Loss)
4, 8, 12, 16, 20 dB States
24, 28 dB States
All Attenuation States
0.75 - 1.4 GHz
1.40 - 2.0 GHz
± 0.3 + 3% of Atten. Setting Max
± 0.4 + 6% of Atten. Setting Max
± 0.3 + 3% of Atten. Setting Max
dB
Input Power for 0.1 dB Compression
5V
3V
0.75 - 2.0 GHz
20
19
dBm
Input Third Order Intercept
(Two-Tone Input Power = 0 dBm Each)
5V
3V
0.75 - 2.0 GHz
46
45
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.75 - 2.0 GHz
560
600
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC230MS8ETR | 制造商:Hittite Microwave Corp 功能描述:HMC230 Series 0.75 - 2 GHz 4 dB LSB GaAs MMIC 3-Bit Digital Attenuator - MSOP-8 |
| HMC231G7 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT HIGH ISOLATION SPST SWITCH, DC - 6 GHz |
| HMC231G7_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT HIGH ISOLATION SPST SWITCH, DC - 6.0 GHz |
| HMC231G7_08 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT HIGH ISOLATION SPST SWITCH, DC - 6 GHz |
| HMC231G7TR | 功能描述:RF Switch IC General Purpose SPDT 6GHz 50 Ohm 7-SMD 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:过期 频率?- 下:DC 频率?- 上:6GHz 隔离 @ 频率:48dB @ 4GHz（标准） 插损 @ 频率:1.4dB @ 4GHz IIP3:49dBm（标准） 拓扑:- 电路:SPDT P1dB:27dBm 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:5V RF 类型:通用 封装/外壳:7-SMD，鸥翼型 供应商器件封装:7-SMD 标准包装:1 |
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