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参数资料
| 型号： | HMC308 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 3800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ULTRA SMALL, PLASTIC, SOT-26, 6 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 246K |
| 代理商： | HMC308 |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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SM
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9
9 - 5
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
-4
0
4
8
12
16
20
24
28
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
4
8
12
16
20
24
0.5
1
1.5
2
2.5
3
3.5
4
+25 C
+85 C
-40 C
Psat
(dBm)
FREQUENCY (GHz)
4
8
12
16
20
24
0.5
1
1.5
2
2.5
3
3.5
4
+25 C
+85 C
-40 C
P1dB
(dBm)
FREQUENCY (GHz)
Psat vs. Temperature @ Vdd = +3V
Output P1dB vs.
Temperature @ Vdd = +3V
Power Compression
@ 2.0 GHz, Vdd = +3V
Power Compression
@ 2.5 GHz, Vdd = +3V
Output IP3
vs. Temperature @ Vdd = +3V
6
10
14
18
22
26
30
34
38
0.5
1
1.5
2
2.5
3
3.5
4
+25 C
+85 C
-40 C
IP3
(dBm)
FREQUENCY (GHz)
HMC308 / 308E
v05.1107
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.25 mW/°C above 85 °C)
0.406 W
Thermal Resistance
(channel to lead)
160 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC308_08 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz |
| HMC308_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz |
| HMC308E | 功能描述:IC MMIC AMP GP SOT26 RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC308ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP GP SOT26 制造商:Hittite Microwave Corp 功能描述:HMC308 Series 0.8 - 3.8 GHz General Purpose GaAs MMIC Amplifier - SOT-26-6 |
| HMC309MS8 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH |
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