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参数资料
| 型号： | HMC311LP3E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC GAIN BLOCK AMP 16QFN |
| 标准包装： | 1 |
| 频率： | 0Hz ~ 6GHz |
| P1dB： | 13dBm |
| 增益： | 14dB |
| 噪音数据： | 4.5dB |
| RF 型： | 通用 |
| 电源电压： | 5V |
| 电流 - 电源： | 74mA |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1017-6 |
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
The HMC311LP3(E) is ideal for:
? Cellular / PCS / 3G
? Fixed Wireless & WLAN
? CATV & Cable Modem
? Microwave Radio
Functional Diagram
Features
P1dB Output Power: +15.5 dBm
Output IP3: +32 dBm
Gain: 14.5 dB
50 Ohm I/O’s
16 Lead 3x3mm SMT Package: 9mm 2
General Description
The HMC311LP3(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC
SMT DC to 6 GHz amplifiers. This 3x3mm
QFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, T A = +25° C
Parameter
DC - 1.0 GHz
Min.
13.0
Typ.
14.5
Max.
Units
dB
Gain
1.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 2.0 GHz
12.5
12.0
14.3
14.0
0.005
0.008
dB
dB
dB/ °C
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
DC - 6 GHz
DC - 2.0 GHz
13.5
0.008
0.012
13
11
15
18
15.5
0.012
0.016
dB/ °C
dB/ °C
dB
dB
dB
dB
dBm
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 6 GHz
12.0
10.0
15.0
13.0
32
30
28
24
4.5
55
74
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC311LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP 16QFN |
| HMC311SC70 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz |
| HMC311SC70_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz |
| HMC311SC70E | 功能描述:IC GAIN BLOCK AMP SC70 RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC311SC70ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SC70 制造商:Hittite Microwave Corp 功能描述:HMC311 Series DC - 8 GHz InGaP HBT Gain Block MMIC Amplifier - SC70-6 |
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