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参数资料
| 型号： | HMC322LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 开关 |
| 英文描述： | 0 MHz - 8000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.9 dB INSERTION LOSS |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 24 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 271K |
| 代理商： | HMC322LP4E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Outline Drawing
Bias Voltage Range (Vee)
-7.0 Vdc
Control Voltage Range
(A, B, & C)
Vee -0.5V to +1.0 Vdc
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Maximum Input Power
26 dBm
ESD Sensitivity (HBM)
Class 1B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC322LP4 / 322LP4E
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8 GHz
v05.1205
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC322LP4
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H322
XXXX
HMC322LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H322
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
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| HMC341LC3B | 21000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC344LC3 | 0 MHz - 8000 MHz RF/MICROWAVE SGL POLE FOUR THROW SWITCH, 3 dB INSERTION LOSS |
相关代理商/技术参数 |
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| HMC322-SX | 功能描述:RF Switch IC VSAT SP8T 10GHz 50 Ohm Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:生命周期结束 频率?- 下:0Hz 频率?- 上:10GHz 隔离 @ 频率:32dB @ 6GHz（标准） 插损 @ 频率:2.1dB @ 6GHz IIP3:38dBm（标准） 拓扑:吸收性 电路:SP8T P1dB:23dBm（标准） IP1dB 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:- RF 类型:VSAT 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC323 | 制造商:Hittite Microwave Corp 功能描述:0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC323_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz |
| HMC324MS8G | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz |
| HMC324MS8G_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz |
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