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参数资料
| 型号： | HMC322LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 开关 |
| 英文描述： | 0 MHz - 8000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.9 dB INSERTION LOSS |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 24 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 271K |
| 代理商： | HMC322LP4E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1, 3, 5, 7,
12, 14, 16,
18, 21, 23
GND
Package bottom has exposed metal paddle that
must also be connected to PCB RF ground.
2, 4, 6,
13, 15, 17,
19, 22, 24
RF1 - RF8
& RFC
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
8
VEE
Supply Voltage = -5V ± 10%
9
CTLC
See truth table and control voltage table.
10
CTLB
See truth table and control voltage table.
11
CTLA
See truth table and control voltage table.
20
N/C
This pin should be connected to PCB RF
ground to maximize isolation.
Pin Descriptions
HMC322LP4 / 322LP4E
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8 GHz
v05.1205
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相关代理商/技术参数 |
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| HMC322-SX | 功能描述:RF Switch IC VSAT SP8T 10GHz 50 Ohm Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:生命周期结束 频率?- 下:0Hz 频率?- 上:10GHz 隔离 @ 频率:32dB @ 6GHz（标准） 插损 @ 频率:2.1dB @ 6GHz IIP3:38dBm（标准） 拓扑:吸收性 电路:SP8T P1dB:23dBm（标准） IP1dB 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:- RF 类型:VSAT 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC323 | 制造商:Hittite Microwave Corp 功能描述:0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC323_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz |
| HMC324MS8G | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz |
| HMC324MS8G_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz |
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