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参数资料
| 型号： | HMC341 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 24000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.42 X 1.06 MM, 0.10 MM HEIGHT, DIE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 223K |
| 代理商： | HMC341 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output IP3 @ Vdd = +3V
Output IP3 @ Vdd = +5V
Isolation
Gain & Noise Figure
vs. Supply Voltage @ 28 GHz
Output P1dB @ Vdd = +3V
Output P1dB @ Vdd = +5V
0
2
4
6
8
10
12
14
16
22
24
26
28
30
32
+25 C
-55 C
+85 C
P1dB
(dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
22
24
26
28
30
32
Vdd = +3V
Vdd = +5V
ISOLATION
(dB)
FREQUENCY (GHz)
0
5
10
15
20
25
22
24
26
28
30
32
+25 C
-55 C
+85 C
IP3
(dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
22
24
26
28
30
32
+25 C
-55 C
+85 C
IP3
(dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
22
24
26
28
30
32
+25 C
-55 C
+85 C
P1dB
(dBm)
FREQUENCY (GHz)
12
12.2
12.4
12.6
12.8
13
13.2
13.4
13.6
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
2.5
3
3.5
4
4.5
5
5.5
GAIN
dB)
NOI
SE
FI
GURE
(dB)
Vdd SUPPLY VOLTAGE (Vdc)
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
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相关代理商/技术参数 |
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|---|---|
| HMC341_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC341_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC341LC3B | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA GAAS 12-QFN |
| HMC341LC3B_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz |
| HMC341LC3BTR | 功能描述:RF Amplifier IC General Purpose 21GHz ~ 29GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:21GHz ~ 29GHz P1dB:8.5dBm 增益:13dB 噪声系数:3dB RF 类型:通用 电压 - 电源:3V 电流 - 电源:35mA 测试频率:24GHz ~ 26GHz 封装/外壳:12-VFQFN 裸露焊盘 供应商器件封装:12-SMT（3x3） 标准包装:1 |
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