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参数资料
| 型号： | HMC341 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 24000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.42 X 1.06 MM, 0.10 MM HEIGHT, DIE-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 223K |
| 代理商： | HMC341 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
+3 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 3.44 mW/°C above 85 °C)
0.310 W
Thermal Resistance
(channel to die bottom)
290 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
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| HMC341_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
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| HMC341LC3BTR | 功能描述:RF Amplifier IC General Purpose 21GHz ~ 29GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:21GHz ~ 29GHz P1dB:8.5dBm 增益:13dB 噪声系数:3dB RF 类型:通用 电压 - 电源:3V 电流 - 电源:35mA 测试频率:24GHz ~ 26GHz 封装/外壳:12-VFQFN 裸露焊盘 供应商器件封装:12-SMT（3x3） 标准包装:1 |
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