参数资料
型号: HMC349LP4CE
厂商: Hittite Microwave Corporation
文件页数: 1/6页
文件大小: 0K
描述: IC GAAS MESFET SW SPDT 4X4QFN
标准包装: 1
RF 型: 通用
频率: 0Hz ~ 4GHz
特点: SPDT
封装/外壳: 16-VQFN 裸露焊盘
供应商设备封装: 16-QFN(4x4)
包装: 标准包装
其它名称: 1127-1025-6
HMC349LP4C / 349LP4CE
v03.0413
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4 GHz
Typical Applications
The HMC349LP4C / HMC349LP4CE is ideal for:
? Basestation Infrastructure
? MMDS & 3.5 GHz WLL
? CATV/CMTS
? Test Instrumentation
Functional Diagram
Features
High Isolation: 67 dB @ 1 GHz
62 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Reflective Design
All Off State
16 mm 2 Leadless QFN SMT Package
General Description
The HMC349LP4C(E) is a high isolation non-reflective
DC to 4 GHz GaAs MESFET SPDT switch in a low cost
leadless surface mount package. The switch is ideal
for cellular/PCS/3G basestation applications yielding
60 to 65 dB isolation, low 0.9 dB insertion loss and
+52 dBm input IP3. Power handling is excellent
up through the 3.5 GHz WLL band with the switch
offering a P1dB compression point of +31 dBm. On-
chip circuitry allows a single positive voltage control of
0/+5 Volts at very low DC currents. An enable input
(EN) set to logic high will put the switch in an “all off ”
state.
Electrical Specifications, T A = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Insertion Loss
Isolation (RFC to RF1/RF2)
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 4.0 GHz
Min.
60
55
Typ.
0.9
1.0
1.2
1.4
67
62
Max.
1.2
1.3
1.5
1.7
Units
dB
dB
dB
dB
dB
dB
DC - 2.0 GHz
20
dB
Return Loss (On State)
Return Loss (Off State)
DC - 3.0 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
15
13
15
dB
dB
dB
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.25 - 4.0 GHz
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
27
31
52
50
49
46
dBm
dBm
dBm
dBm
dBm
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
50
120
ns
ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
相关PDF资料
PDF描述
HMC349MS8GE IC GAAS MESFET SW SPDT 8MSOP
HMC361S8GE IC FREQ DIVIDER DC-10GHZ 8SOIC
HMC363S8GE IC FREQ DIVIDER DC-12GHZ 8SOIC
HMC365S8GE IC FREQ DIVIDER DC-13GHZ 8SOIC
HMC368LP4E IC FREQ DIVIDER 9-16GHZ 16QFN
相关代理商/技术参数
参数描述
HMC349LP4CETR 制造商:Hittite Microwave Corp 功能描述:IC GAAS MESFET SW SPDT 4X4QFN 制造商:Hittite Microwave Corp 功能描述:HMC349 Series DC - 4.0 GHz GaAs MMIC SPDT Non Reflective CATV Switch - QFN-16
HMC349MS8G 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HMC349MS8G_07 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HMC349MS8G_08 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
HMC349MS8GE 功能描述:IC GAAS MESFET SW SPDT 8MSOP RoHS:是 类别:RF/IF 和 RFID >> RF 开关 系列:- 标准包装:25,000 系列:* RF 型:通用 频率:0Hz ~ 3GHz 特点:SPDT 封装/外壳:6-XFDFN 裸露焊盘 供应商设备封装:TSLP-7 包装:带卷 (TR) 其它名称:SP000671392