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参数资料
| 型号： | HMC414MS8G |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2200 MHz - 2800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, SMT, 8 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 240K |
| 代理商： | HMC414MS8G |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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11
11 - 61
Noise Figure vs. Temperature, Vs= 3.6V
Noise Figure vs. Temperature, Vs= 5V
Reverse Isolation
vs. Temperature, Vs= 3.6V
Gain & Power vs. Supply Voltage
Power Down Isolation, Vs= 3.6V
Gain, Power & Quiescent
Supply Current vs Vpd@ 2.4 GHz
-40
-30
-20
-10
0
2
2.2
2.4
2.6
2.8
3
+25 C
+85 C
-40 C
ISOLATION
(dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
2
2.2
2.4
2.6
2.8
3
ISOLATION
(dB)
FREQUENCY (GHz)
0
3
6
9
12
15
2
2.2
2.4
2.6
2.8
3
+25 C
+85 C
-40 C
NOI
SE
FI
GURE
(dB)
FREQUENCY (GHz)
0
3
6
9
12
15
2
2.2
2.4
2.6
2.8
3
+25 C
+85 C
-40 C
NOI
SE
FI
GURE
(dB)
FREQUENCY (GHz)
18
20
22
24
26
28
14
18
22
26
30
34
2.75
3.25
3.75
4.25
4.75
5.25
Gain
P1dB
Psat
GAIN
dB)
P1dB,
Psat
(dBm)
Vcc SUPPLY VOLTAGE (Vdc)
12
16
20
24
28
32
0
80
160
240
320
400
2
2.4
2.8
3.2
3.6
GAIN
(dB),
P1dB
(d
Bm),
Psat
(dBm)
Ic
q
(mA)
Vpd (Vdc)
Icq
P1dB
Psat
Gain
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC414MS8G_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8G_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8GE | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 2.1-3.2GHZ 8-MSOP |
| HMC414MS8GETR | 制造商:Hittite Microwave Corp 功能描述:HMC414 Series 2.2 - 2.8 GHz HBT MMIC Power Amplifier - MSOP-8EP |
| HMC415LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
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