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参数资料
| 型号： | HMC450QS16G |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, SMT, 16 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 277K |
| 代理商： | HMC450QS16G |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
General Description
Features
Functional Diagram
The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
amplifiers operating between 800 and 1000 MHz. The
amplifier is packaged in a low cost, surface mount
16 lead package and offers the same pinout and
functionality as the higher band HMC413QS16G 1.6-
2.3 GHz PA. With a minimum of external components,
the amplifier provides 26 dB of gain, +40 dBm OIP3
and +28.5 dBm of saturated power from a +5V supply
voltage. The integrated power control (Vpd) can be used
for full power down or RF output power/current control.
The combination of high gain and high output IP3
make the HMC450QS16G & HMC450QS16GE ideal
linear drivers for Cellular, PCS & 3G applications.
Gain: 26 dB
32% PAE @ 28.5 dBm Output Power
+40 dBm Output IP3
Integrated Power Control (Vpd)
Included in the HMC-DK002 Designer’s Kit
Electrical Specifications, T
A = +25° C, Vs = +5V, Vpd = +4V
[1]
Typical Applications
The HMC450QS16G / HMC450QS16GE is ideal for
power and driver amplifier applications:
GSM, GPRS, & Edge
CDMA & WCDMA
Base Stations & Repeaters
Parameter
Min.
Typ.
Max.
Units
Frequency Range
0.8 - 1.0
GHz
Gain
23
26
dB
Gain Variation Over Temperature
0.015
0.025
dB/°C
Input Return Loss
17
dB
Output Return Loss
13
dB
Output Power for 1 dB Compression (P1dB)
23
26
dBm
Saturated Output Power (Psat)
28.5
dBm
Output Third Order Intercept (IP3) [2]
37
40
dBm
Noise Figure
8dB
Supply Current (Icq)
310
mA
Control Current (Ipd)
12
mA
Switching Speed
tON, tOFF
10
ns
[1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC450QS16G_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
| HMC450QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 0.5W 16-QSOP |
| HMC450QS16GETR | 功能描述:RF Amplifier IC General Purpose 800MHz ~ 1GHz 16-SMD 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:800MHz ~ 1GHz P1dB:26.5dBm 增益:26dB 噪声系数:8dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:310mA 测试频率:900MHz 封装/外壳:16-SSOP（0.154"，3.90mm 宽）裸焊盘 供应商器件封装:16-SMD 标准包装:1 |
| HMC451 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| HMC451_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
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