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参数资料
| 型号： | HMC450QS16G |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, SMT, 16 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 277K |
| 代理商： | HMC450QS16G |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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T
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd1, Vpd2)
+5Vdc
RF Input Power (RFIN)(Vs = +5Vdc,
VPD = +4.0 Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 28 mW/°C above 85 °C)
1.86 W
Thermal Resistance
(junction to ground paddle)
35 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Vs (V)
Icq (mA)
4.75
300
5.0
310
5.25
325
Typical Supply Current
vs. Supply Voltage
Note: Amplifier will operate over full voltage range shown above
HMC450QS16G / 450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC450QS16G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H450
XXXX
HMC450QS16GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H450
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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相关代理商/技术参数 |
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| HMC450QS16G_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
| HMC450QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 0.5W 16-QSOP |
| HMC450QS16GETR | 功能描述:RF Amplifier IC General Purpose 800MHz ~ 1GHz 16-SMD 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:800MHz ~ 1GHz P1dB:26.5dBm 增益:26dB 噪声系数:8dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:310mA 测试频率:900MHz 封装/外壳:16-SSOP（0.154"，3.90mm 宽）裸焊盘 供应商器件封装:16-SMD 标准包装:1 |
| HMC451 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| HMC451_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
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