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参数资料
| 型号： | HMC452QS16G |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 400 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | MINIATURE, PLASTIC, SMT, QSOP-16 |
| 文件页数： | 1/22页 |
| 文件大小： | 737K |
| 代理商： | HMC452QS16G |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
v01.0205
General Description
Features
Functional Diagram
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amp-
lifier gain is typically 22.5 dB at 0.4 GHz and 9 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the
HMC452QS16G(E)ideal
power
amplifiers
for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
Electrical Specifications, T
A = +25°C, Vs= +5V, VPD = +5V
[1]
Typical Applications
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
GSM, GPRS & EDGE
CDMA & W-CDMA
CATV/Cable Modem
Fixed Wireless & WLL
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
2010 - 2170
MHz
Gain
20
22.5
19
21.5
13
15.5
7.5
10
6.5
9
dB
Gain Variation Over
Temperature
0.012
0.02
0.012
0.02
0.012
0.02
0.012
0.02
0.012
0.02
dB/C
Input Return Loss
13
15
9
17
11
dB
Output Return Loss
7
8
12
15
20
dB
Output Power for 1dB
Compression (P1dB)
27.5
30.5
27.5
30.5
27
30
28
31
28
31
dBm
Saturated Output
Power (Psat)
31
31.5
32.5
dBm
Output Third Order
Intercept (IP3) [2]
40
43
41
44
45
48
45
48
45
48
dBm
Noise Figure
7
7.5
dB
Supply Current (Icq)
485
mA
Control Current (IPD)
10
mA
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC452QS16G_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16G_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 1W 16-QSOP |
| HMC452ST89 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452ST89_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
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