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参数资料
| 型号： | HMC452QS16G |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 400 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | MINIATURE, PLASTIC, SMT, QSOP-16 |
| 文件页数： | 4/22页 |
| 文件大小： | 737K |
| 代理商： | HMC452QS16G |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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IF
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11
11 - 145
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Control Voltage (Vpd)
+5.3 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
+31 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 41.5 mW/°C above 85 °C)
2.7 W
Thermal Resistance
(junction to ground paddle)
24.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Power Dissipation
1
1.5
2
2.5
3
-5
0
5
10
15
20
POWER
DISSIPATION
(W)
INPUT POWER (dBm)
Max Pdiss @ +85C
900 MHz
1900 MHz
HMC452QS16G / 452QS16GE
v01.0205
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC452QS16G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H452
XXXX
HMC452QS16GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H452
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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| HMC452QS16G_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
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