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参数资料
| 型号： | HMC452QS16GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 400 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMT, QSOP-16 |
| 文件页数： | 20/22页 |
| 文件大小： | 737K |
| 代理商： | HMC452QS16GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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N
E
A
R
&
P
O
W
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A
M
PL
IF
IE
R
S
-SM
T
Output IP3 vs. Temperature @ 900 MHz
Noise Figure vs. Temperature @ 900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
Reverse Isolation
vs. Temperature @ 900 MHz
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
* Icq is controlled by varying VPD.
30
32
34
36
38
40
42
44
46
48
50
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
-40 C
OIP3
(dBm)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
ISOLATION
(dB)
FREQUENCY (GHz)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
12
14
16
18
20
22
24
26
28
ACPR
(dBc)
Channel Power (dBm)
Source ACPR
CDMA IS95
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
5.5V
4.5V
5V
10
15
20
25
30
35
40
45
50
55
250
300
350
400
450
500
Gain
P1dB
Psat
OIP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Icq (mA)
0
1
2
3
4
5
6
7
8
9
10
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
NOI
SE
FI
GURE
(dB)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Vs (Vdc)
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
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