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参数资料
| 型号： | HMC452QS16GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 400 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMT, QSOP-16 |
| 文件页数： | 22/22页 |
| 文件大小： | 737K |
| 代理商： | HMC452QS16GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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LI
N
E
A
R
&
P
O
W
ER
A
M
PL
IF
IE
R
S
-SM
T
Output IP3 vs. Temperature @ 1900 MHz
Noise Figure vs.
Temperature @ 1900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Reverse Isolation
vs. Temperature @ 1900 MHz
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
* Icq is controlled by varying VPD.
30
32
34
36
38
40
42
44
46
48
50
52
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
OIP3
(dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
NOI
SE
FI
GURE
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
ISOLATION
(dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
55
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
250
300
350
400
450
500
Gain
P1dB
Psat
OIP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Icq (mA)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
14
16
18
20
22
24
26
28
ACPR
(dBc)
Channel Power (dBm)
Source ACPR
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V
5V
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
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