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参数资料
| 型号： | HMC457QS16GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMT, QSOP-16 |
| 文件页数： | 1/10页 |
| 文件大小： | 360K |
| 代理商： | HMC457QS16GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
General Description
Features
Functional Diagram
The HMC457QS16G & HMC457QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 1.7 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier
gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the amplifier output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC457QS16G & HMC457QS16GE ideal power
amplifiers for Cellular/3G base station & repeater
applications.
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm2
Included in the HMC-DK002 Designer’s Kit
Electrical Specifications, T
A = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V
[1]
Typical Applications
The HMC457QS16G / HMC457QS16GE is ideal for
applications requiring a high dynamic range amplifier:
CDMA & W-CDMA
GSM, GPRS & Edge
Base Stations & Repeaters
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1710 - 1990
2010 - 2170
MHz
Gain
24
27
22
25
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
dB / °C
Input Return Loss
11
dB
Output Return Loss
8
5
dB
Output Power for 1dB Compression (P1dB)
26
29
27.5
30.5
dBm
Saturated Output Power (Psat)
32.5
32
dBm
Output Third Order Intercept (IP3) [2]
42
45
42
45
dBm
Noise Figure
6
5
dB
Supply Current (Icq)
500
mA
Control Current (Ipd)
4
mA
Bias Current (Vbias)
10
mA
[1] Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
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