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参数资料
| 型号： | HMC457QS16GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMT, QSOP-16 |
| 文件页数： | 6/10页 |
| 文件大小： | 360K |
| 代理商： | HMC457QS16GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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LI
N
E
A
R
&
P
O
W
ER
A
M
PL
IF
IE
R
S
-SM
T
Output IP3
vs. Temperature @ 2100 MHz
Gain, Power & IP3
vs. Supply Current @ 2100 MHz*
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
Noise Figure
vs. Temperature @ 2100 MHz
0
1
2
3
4
5
6
7
8
9
10
1.9
2
2.1
2.2
2.3
+25 C
+85 C
-40 C
NOI
SE
FI
GURE
(dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
440
480
520
560
600
Gain
P1dB
Psat
OIP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Icq (mA)
*Icq is controlled by varying Vpd
Power Compression @ 2100 MHz
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH (Uplink)
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
12
14
16
18
20
22
24
26
28
ACPR
(dBc)
Channel Power (dBm)
Source ACPR
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
5V
4.5V
5.5V
0
5
10
15
20
25
30
35
40
45
50
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pout (dBm)
Gain (dB)
PAE (%)
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
34
36
38
40
42
44
46
48
50
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25 C
+85 C
-40 C
OIP3
(dBm)
FREQUENCY (GHz)
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
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