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参数资料
| 型号： | HMC459 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3.12 X 1.63 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 1/8页 |
| 文件大小： | 271K |
| 代理商： | HMC459 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
v01.1007
General Description
Features
Functional Diagram
The HMC459 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 18 GHz. The amplifier provides 17 dB of gain,
+31.5 dBm output IP3 and +25 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is good making the
HMC459 ideal for EW, ECM and radar driver amplifier
applications. The HMC459 amplifier I/O’s are inter-
nally matched to 50 Ohms facilitating easy integration
into Multi-Chip-Modules (MCMs). All data is with the
chip in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils).
P1dB Output Power: +25 dBm
Gain: 17 dB
Output IP3: +31.5 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
Typical Applications
The HMC459 wideband driver is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Electrical Specifications, T
A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min
Typ
Max
Units
Frequency Range
DC - 2.0
DC - 6.0
DC - 10.0
DC - 18.0
GHz
Gain
16.5
18.5
15
18
14
17
9
12
dB
Gain Flatness
±0.5
±0.75
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.04
0.035
0.045
dB/ °C
Input Return Loss
22
19.5
19
10
dB
Output Return Loss
27
15
14
dB
Output Power for 1 dB
Compression (P1dB)
21
24
20.5
24.5
22
25
14
17
dBm
Saturated Output Power (Psat)
26.5
21
dBm
Output Third Order Intercept
(IP3)
40
34
31.5
26
dBm
Noise Figure
4.0
3.0
6.5
dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC459_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| HMC459_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| HMC459-SX | 功能描述:IC MMIC PWR AMP DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:0Hz ~ 18GHz P1dB:25dBm 增益:17dB 噪声系数:3dB RF 类型:通用 电压 - 电源:8V 电流 - 电源:290mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC460 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
| HMC460_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
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