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参数资料
| 型号： | HMC463LP5 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 5 X 5 MM, PLASTIC, SMT, 32 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 737K |
| 代理商： | HMC463LP5 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC463LP5 / 463LP5E
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
v08.0511
General Description
Features
Functional Diagram
The HmC463lp5(e) is a GaAs mmiC pHemT low
Noise AGC Distributed Amplifier packaged in a lead-
less 5x5 mm surface mount package which oper-
ates between 2 and 20 GHz. The amplifier provides
13 dB of gain, 2.8 dB noise figure and 18 dBm of out-
put power at 1 dB gain compression while requiring
only 60 mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 8 dB typical. Gain flatness is excellent at
±0.5 dB from 6 - 18 GHz making the HmC463lp5(e)
ideal for ew, eCm rADAr and test equipment appli-
cations. The HmC463lp5(e) lNA i/os are internally
matched to 50 ohms and are internally DC blocked.
Gain: 13 dB
Noise figure: 2.8 dB @ 10 GHz
p1dB output power: +18 dBm @ 10 GHz
supply Voltage: +5V @ 60 mA
50 ohm matched input/output
32 lead 5 x 5 mm smT package: 25 mm
Typical Applications
The HmC463lp5(e) is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military EW, ECM & C3i
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25 °C, Vdd = 5V, Idd = 60 mA*
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
2 - 6
6 - 18
18 - 20
GHz
Gain
10
13
9
12
8
11
dB
Gain flatness
±0.5
dB
Gain Variation over Temperature
0.010
0.015
0.010
0.015
0.010
0.015
dB/ °C
Noise figure
3
4
3
5
5.5
6.5
dB
input return loss
15
13
12
dB
output return loss
13
10
dB
output power for 1 dB Compression
(p1dB)
16
19
11
16
10
12
dBm
saturated output power (psat)
21
19
dBm
output Third order intercept (ip3)
30
24
22
dBm
supply Current
(idd) (Vdd = 5V, Vgg1 = -0.9V Typ.)
60
80
60
80
60
80
mA
* Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical.
相关PDF资料 |
PDF描述 |
|---|---|
| HMC463LP5E | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC464 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC467LP3 | 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.2 dB INSERTION LOSS-MAX |
| HMC467LP3E | 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.2 dB INSERTION LOSS-MAX |
| HMC468LP3ETR | 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC463LP5_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz |
| HMC463LP5E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP AGC LNA 32-QFN |
| HMC463LP5ETR | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:2GHz ~ 20GHz P1dB:16dBm 增益:13dB 噪声系数:2.8dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:60mA 测试频率:10GHz 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
| HMC463-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:2GHz ~ 20GHz P1dB:16dBm 增益:14dB 噪声系数:2.5dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:60mA 测试频率:10GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC464 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
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