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参数资料
| 型号： | HMC464 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3.12 X 1.63 MM, 0.10 MM HEIGHT, DIE-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 250K |
| 代理商： | HMC464 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v04.0308
General Description
Features
Functional Diagram
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30 dBm
Output IP3 and +26 dBm of output power at 1 dB gain
compression while requiring 290 mA from a +8V sup-
ply. Gain flatness is excellent from 2 - 18 GHz making
the HMC464 ideal for EW, ECM and radar driver
amplifier applications. The HMC464 amplifier I/O’s
are internally matched to 50 Ohms facilitating easy
integration into Multi-Chip-Modules (MCMs). All data
is with the chip in a 50 Ohm test fixture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
P1dB Output Power: +26 dBm
Gain: 16 dB
Output IP3: +30 dBm
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
Typical Applications
The HMC464 wideband driver is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.0 - 6.0
6.0 - 18.0
18.0 - 20.0
GHz
Gain
14
16
13
16
11
14
dB
Gain Flatness
±0.25
±0.5
±0.75
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.04
dB/ °C
Input Return Loss
15
17
13
dB
Output Return Loss
14
12
11
dB
Output Power for 1 dB Compression (P1dB)
23.5
26.5
22
26
19
22
dBm
Saturated Output Power (Psat)
28
27.5
24.5
dBm
Output Third Order Intercept (IP3)
32
30
24
dBm
Noise Figure
4.0
6.0
dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC464_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| HMC464LP5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
| HMC464LP5_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| HMC464LP5E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP MMIC WB PHEMT 32SMD |
| HMC464-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:2GHz ~ 20GHz P1dB:26dBm 增益:16dB 噪声系数:4dB RF 类型:通用 电压 - 电源:8V 电流 - 电源:290mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
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