参数资料
型号: HMC464
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3.12 X 1.63 MM, 0.10 MM HEIGHT, DIE-4
文件页数: 3/6页
文件大小: 250K
代理商: HMC464
L
IN
E
A
R
&
P
O
W
E
R
A
M
P
L
IF
IE
R
S
-
C
H
IP
3
3 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output P1dB vs. Temperature
Output Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9 Vdc
Gate Bias Voltage (Vgg1)
-2 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8) Vdc to Vdd
RF Input Power (RFIN)(Vdd = +8 Vdc)
+20 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
4.64 W
Thermal Resistance
(channel to die bottom)
19.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+7.5
292
+8.0
290
+8.5
288
Typical Supply Current vs. Vdd
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
P1dB
(dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
Psat
(dBm)
FREQUENCY (GHz)
16
20
24
28
32
36
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
IP3
(dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
7.5
8
8.5
Gain
P1dB
Psat
IP3
GAIN
(dB),
P1dB
(dBm),
Psat
(dBm),
IP3
(dBm
)
Vdd SUPPLY VOLTAGE (V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC464
v04.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
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