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参数资料
| 型号： | HMC464 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3.12 X 1.63 MM, 0.10 MM HEIGHT, DIE-4 |
| 文件页数： | 4/6页 |
| 文件大小： | 250K |
| 代理商： | HMC464 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is AC coupled and matched to 50 Ohms.
2Vgg2
Gate Control 2 for amplifier. +3V should be applied to
Vgg2 for nominal operation.
3
RFOUT & Vdd
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
4Vgg1
Gate Control 1 for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC464
v04.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
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| HMC464_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
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| HMC464-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:2GHz ~ 20GHz P1dB:26dBm 增益:16dB 噪声系数:4dB RF 类型:通用 电压 - 电源:8V 电流 - 电源:290mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
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