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参数资料
| 型号： | HMC478MP86E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, MICRO-P-4 |
| 文件页数： | 3/6页 |
| 文件大小： | 230K |
| 代理商： | HMC478MP86E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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IN
BL
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8
8 - 3
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 62 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 18 Ohms
0
2
4
6
8
10
12
14
16
18
20
22
24
01
23
45
+25 C
+85 C
-40 C
P1dB
(dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
01
23
45
+25C
+85C
-40C
Psat
(dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
01
23
45
+25 C
+85 C
-40 C
OIP3
(dBm)
FREQUENCY (GHz)
40
45
50
55
60
65
70
75
80
3.7
3.8
3.9
4
4.1
4.2
4.3
Icc
(mA)
Vcc (Vdc)
+85 C
+25 C
-40 C
0
4
8
12
16
20
24
28
32
36
567
8
Gain
P1dB
Psat
OIP3
Gain
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm)
Vs (Vdc)
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 18 Ohms @ 850 MHz
0
4
8
12
16
20
24
28
32
36
4.5
5
5.5
Gain
P1dB
Psat
OIP3
Gain
(dB),
P1dB
(dBm),
Psat
(dBm),
OIP3
(dBm
)
Vs (Vdc)
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
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| HMC478SC70ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SC70 制造商:Hittite Microwave Corp 功能描述:HMC478 Series DC - 4 GHz SiGe HBT Gain Block MMIC Amplifier - SC70 |
| HMC478ST89 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
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