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参数资料
| 型号： | HMC478MP86E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, MICRO-P-4 |
| 文件页数： | 4/6页 |
| 文件大小： | 230K |
| 代理商： | HMC478MP86E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
A
M
P
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IF
IE
R
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-
D
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IV
E
R
&
G
A
IN
BL
OC
K
-
SM
T
8
8 - 4
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFIN)(Vcc = +4.3 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
HMC478MP86
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
478
HMC478MP86E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
478
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
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