参数资料
型号: HMC499LC4
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 4 X 4 MM, ROHS COMPLIANT, LEADLESS, ALUMINIUM, SMT, 24 PIN
文件页数: 1/6页
文件大小: 238K
代理商: HMC499LC4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 288
L
IN
E
A
R
&
P
O
W
E
R
A
M
P
L
IF
IE
R
S
-
SM
T
HMC499LC4
SMT PHEMT MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v03.1208
General Description
Features
Functional Diagram
The HMC499LC4 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier housed in a
leadless “Pb free” RoHS Compliant SMT package.
Operating from 21 to 32 GHz, the amplifier provides
16 dB of gain, +24 dBm of saturated power and 16%
PAE from a +5V supply voltage. The RF I/Os are
DC blocked and matched to 50 Ohms for ease of
use. The HMC499LC4 eliminates the need for wire
bonding, allowing use of surface mount manufacturing
techniques.
Output IP3: +34 dBm
Saturated Power: +24 dBm @ 16% PAE
Gain: 17 dB
Supply: +5V @ 200mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Electrical Specifications, T
A = +25° C, Vdd1, 2, 3 = 5V, Idd = 200 mA*
Typical Applications
The HMC499LC4 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military End-Use
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
21 - 24
24 - 28
28 - 32
GHz
Gain
14
17
13
16
9
13
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.02
0.03
dB/ °C
Input Return Loss
10
8
dB
Output Return Loss
11
12
8
dB
Output Power for 1 dB Compression (P1dB)
20
23
20
23
20
23
dBm
Saturated Output Power (Psat)
23.5
24
dBm
Output Third Order Intercept (IP3)
31
34
33.5
dBm
Noise Figure
6
5
dB
Supply Current
(Idd)(Vdd = +5V, Vgg = -0.8V Typ.)
200
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
相关PDF资料
PDF描述
HMC499 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC516LC5 9000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC520 6000 MHz - 10000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX
HMC521 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX
HMC522LC4 11000 MHz - 16000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX
相关代理商/技术参数
参数描述
HMC499LC4_09 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz
HMC499LC4TR 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP MED PWR 24SMD
HMC49DRAH 功能描述:CONN EDGECARD 98POS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:50 位置数:100 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:通孔 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin(0.76µm) 触点类型::全波纹管 颜色:绿 包装:管件 法兰特点:顶部安装开口,无螺纹,0.125"(3.18mm)直径 材料 - 绝缘体:聚苯硫醚(PPS) 工作温度:-65°C ~ 150°C 读数:双
HMC49DRAH-S734 功能描述:CONN EDGECARD 98POS .100 R/A PCB RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:50 位置数:100 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:通孔 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin(0.76µm) 触点类型::全波纹管 颜色:绿 包装:管件 法兰特点:顶部安装开口,无螺纹,0.125"(3.18mm)直径 材料 - 绝缘体:聚苯硫醚(PPS) 工作温度:-65°C ~ 150°C 读数:双
HMC49DRAI 功能描述:CONN EDGECARD 98POS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:50 位置数:100 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:通孔 端子:焊接 触点材料:铜铍 触点表面涂层:金 触点涂层厚度:30µin(0.76µm) 触点类型::全波纹管 颜色:绿 包装:管件 法兰特点:顶部安装开口,无螺纹,0.125"(3.18mm)直径 材料 - 绝缘体:聚苯硫醚(PPS) 工作温度:-65°C ~ 150°C 读数:双