参数资料
型号: HMC609LC4
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 4 X 4 MM, ROHS COMPLIANT, SMT, 24 PIN
文件页数: 1/8页
文件大小: 301K
代理商: HMC609LC4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
L
O
W
NO
IS
E
A
M
P
L
IF
IE
R
S
-
SM
T
8
8 - 230
HMC609LC4
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
v02.0508
General Description
Features
Functional Diagram
The HMC609LC4 is a GaAs PHEMT MMIC Low
Noise Amplifier (LNA) which operates from 2 to 4
GHz. The HMC609LC4 features extremely flat per-
formance characteristics including 20 dB of small
signal gain, 3.5 dB of noise figure and output IP3 of
+36.5 dBm across the operating band. This 50 Ohm
matched amplifier does not require any external
matching components. The HMC609LC4 is compatible
with
high
volume
surface
mount
manufacturing
techniques, and the RF I/Os are DC blocked for fur-
ther ease of integration.
Excellent Gain Flatness: ±0.4 dB
High Gain: 20 dB
Low Noise Figure: 3.5 dB
Output IP3: +36.5 dBm
50 Ohm Matched & DC Blocked RF I/Os
RoHS Compliant 4x4 mm SMT package
Electrical Specifications, T
A = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA
[1]
Typical Applications
The HMC609LC4 is ideal for:
Fixed Microwave
Test & Measurement Equipment
Radar & Sensors
Military & Space
Parameter
Min.
Typ.
Max.
Units
Frequency Range
2 - 4
GHz
Gain
17
20
dB
Gain Variation Over Temperature
0.015
0.02
dB/ °C
Noise Figure
3.5
5.5
dB
Input Return Loss
17
dB
Output Return Loss
15
dB
Output Power for 1 dB
Compression (P1dB)
18.5
21.5
dBm
Saturated Output Power (Psat)
23
dBm
Output Third Order Intercept (IP3)
36.5
dBm
Supply Current (Idd1 + Idd2)
170
220
mA
[1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA
相关PDF资料
PDF描述
HMC609LC4TR 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC613LC4B 100 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC619LP5E 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC619 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC620 3000 MHz - 7000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9 dB CONVERSION LOSS-MAX
相关代理商/技术参数
参数描述
HMC609LC4_09 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
HMC609-SX 功能描述:IC MMIC LNA GAAS DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:2GHz ~ 4GHz P1dB:21dBm 增益:20.5dB 噪声系数:3dB RF 类型:雷达 电压 - 电源:6V 电流 - 电源:170mA 测试频率:2GHz ~ 4GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2
HMC60DRAH 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin(0.25µm) 触点类型::全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口,螺纹插件,4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯(PBT) 工作温度:-65°C ~ 125°C 读数:双
HMC60DRAH-S734 功能描述:CONN EDGECARD 120PS .100 R/A PCB RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin(0.25µm) 触点类型::全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口,螺纹插件,4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯(PBT) 工作温度:-65°C ~ 125°C 读数:双
HMC60DRAI 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin(0.25µm) 触点类型::全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口,螺纹插件,4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯(PBT) 工作温度:-65°C ~ 125°C 读数:双