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参数资料
| 型号： | HMC616LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, PLASTIC, QFN-16 |
| 文件页数： | 1/10页 |
| 文件大小： | 763K |
| 代理商： | HMC616LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
v02.0610
General Description
Features
Functional Diagram
low Noise figure: 0.5 dB
High Gain: 24 dB
High output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC616lp3(e) is ideal for:
Cellular/3G and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
DAB receivers
Electrical Specifications, T
A = +25° C, Rbias = 3.92k Ohms*
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
175 - 230
230 - 660
175 - 230
230 - 660
mHz
Gain
20
22.5
15
20
21
24
15
21
dB
Gain Variation over Temperature
0.002
0.005
dB/ °C
Noise figure
0.5
0.8
0.5
0.8
0.5
0.8
0.5
0.8
dB
input return loss
10
16
12
14
dB
output return loss
9
10
9
10
dB
output power for 1 dB
Compression (p1dB)
8
11
10
15
11
15
14
19
dBm
saturated output power (psat)
8.5
13
11
15.5
12.5
17.5
15.5
19.5
dBm
output Third order intercept (ip3)
20
30
32
37
dBm
supply Current (idd)
30
45
30
45
90
115
90
115
mA
* rbias resistor sets current, see application circuit herein
The HmC616lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
basestation
front-end
receivers
operating between 175 and 660 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC616lp3(e) shares
the same package and pinout with the HmC617-
lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows
the designer to tailor the linearity performance of the
lNA for each application. The HmC616lp3(e) offers
improved noise figure versus the previously released
HmC356lp3(e).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC616LP3_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz |
| HMC616LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
| HMC616LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
| HMC617LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz |
| HMC617LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
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