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参数资料
型号： HMC617LP3E
厂商： HITTITE MICROWAVE CORP
元件分类： 放大器
英文描述： 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装： 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-16
文件页数： 1/8页
文件大小： 726K
代理商： HMC617LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC617LP3 / 617LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
v02.0610
General Description
Features
Functional Diagram
The HmC617lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
basestation
front-end
receivers
operating between 550 and 1200 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
16 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC617lp3(e) shares the same package and
pinout with the HmC618lp3(e) 1.7 - 2.2 GHz lNA.
The HmC617lp3(e) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application. The
HmC617lp3(e) offers improved noise figure versus
the previously released HmC372lp3(e) and the
HmC376lp3(e).
Noise figure: 0.5 dB
Gain: 16 dB
output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC617lp3(e) is ideal for:
Cellular/3G and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
Access points
Electrical Specifications, T
A = +25° C, Rbias = 3.92k Ohms*
parameter
Vdd = +3 Vdc
Vdd = +5 Vdc
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
698 - 960
550 - 1200
698 - 960
550 - 1200
mHz
Gain
13
16
11
15
13.5
16
11.5
16
dB
Gain Variation over Temperature
0.003
0.005
dB/ °C
Noise figure
0.5
0.8
0.5
1.1
0.55
0.85
0.6
1.1
dB
input return loss
28
22
17
dB
output return loss
12
14
12
15
dB
output power for 1 dB
Compression (p1dB)
14
16
12.5
16
18.5
21
16.5
20
dBm
saturated output power (psat)
17
16.5
21
20.5
dBm
output Third order intercept (ip3)
31
30
37
dBm
supply Current (idd)
30
45
30
45
88
115
88
115
mA
* rbias resistor sets current, see application circuit herein
相关PDF资料
PDF描述
HMC617LP3 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC624LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3.8 dB INSERTION LOSS-MAX
HMC627LP5 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC629LP4E 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 5 dB INSERTION LOSS-MAX
HMC629LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 5 dB INSERTION LOSS-MAX
相关代理商/技术参数
参数描述
HMC617LP3ETR 制造商:Hittite Microwave Corp 功能描述:HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier -QFN-16
HMC6187LP4E 制造商:COOPER 制造商全称:Cooper Bussmann, Inc. 功能描述:VARIABLE GAIN AMPLIFIER
HMC618ALP3E 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.85dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:118mA 测试频率:2.2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1
HMC618ALP3ETR 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.75dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:89mA 测试频率:1.7GHz ~ 2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1
HMC618LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
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