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参数资料
| 型号： | HMC617LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-16 |
| 文件页数： | 4/8页 |
| 文件大小： | 726K |
| 代理商： | HMC617LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7
7 - 4
Power Compression @ 900 MHz [1]
-10
0
10
20
30
40
50
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
-10
0
10
20
30
40
50
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
Power Compression @ 900 MHz [2]
Power Compression @ 700 MHz [1]
-10
0
10
20
30
40
50
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
-10
0
10
20
30
40
50
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
Power Compression @ 700 MHz [2]
[1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K
[3] rbias = 3.92K
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz [3]
16
20
24
0
0.2
0.4
0.6
0.8
1
1.2
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
GAIN
P1dB
Noise Figure
GAIN
(dB)
&
P1dB
(dBm)
NOISE
FIGURE
(dB)
SUPPLY VOLTAGE (V)
Gain, Power & Noise Figure
vs. Supply Voltage @ 900 MHz [3]
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
GAIN
P1dB
Noise Figure
GAIN
(dB)
&
P1dB
(dBm)
NOISE
FIGURE
(dB)
SUPPLY VOLTAGE (V)
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相关代理商/技术参数 |
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|---|---|
| HMC617LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier -QFN-16 |
| HMC6187LP4E | 制造商:COOPER 制造商全称:Cooper Bussmann, Inc. 功能描述:VARIABLE GAIN AMPLIFIER |
| HMC618ALP3E | 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.85dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:118mA 测试频率:2.2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1 |
| HMC618ALP3ETR | 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.75dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:89mA 测试频率:1.7GHz ~ 2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1 |
| HMC618LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
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