参数资料
型号: HMC617LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-16
文件页数: 6/8页
文件大小: 726K
代理商: HMC617LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
A
m
p
li
f
ie
r
s
-
lo
w
N
o
is
e
-
s
m
T
7
7 - 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6V
rf input power (rfiN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 8.33 mw/°C above 85 °C)
0.54 w
Thermal resistance
(channel to ground paddle)
120 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Vdd (V)
idd (mA)
2.7
18
3.0
30
3.3
41
4.5
77
5.0
88
5.5
97
Note: Amplifier will operate over full voltage ranges shown above.
Typical Supply
Current vs. Vdd (Rbias = 3.92k)
HMC617LP3 / 617LP3E
v00.0807
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Outline Drawing
part Number
package Body material
lead finish
msl rating
package marking [3]
HmC617lp3
low stress injection molded plastic
sn/pb solder
msl1
[1]
617
XXXX
HmC617lp3e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
617
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
NoTes:
1. leADfrAme mATeriAl: Copper AlloY
2. DimeNsioNs Are iN iNCHes [millimeTers]
3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe
4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm.
6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND.
7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.
Package Information
相关PDF资料
PDF描述
HMC617LP3 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC624LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3.8 dB INSERTION LOSS-MAX
HMC627LP5 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC629LP4E 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 5 dB INSERTION LOSS-MAX
HMC629LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 5 dB INSERTION LOSS-MAX
相关代理商/技术参数
参数描述
HMC617LP3ETR 制造商:Hittite Microwave Corp 功能描述:HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier -QFN-16
HMC6187LP4E 制造商:COOPER 制造商全称:Cooper Bussmann, Inc. 功能描述:VARIABLE GAIN AMPLIFIER
HMC618ALP3E 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.85dB RF 类型:LTE,WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:118mA 测试频率:2.2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT(3x3) 标准包装:1
HMC618ALP3ETR 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带(CT) 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.75dB RF 类型:LTE,WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:89mA 测试频率:1.7GHz ~ 2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT(3x3) 标准包装:1
HMC618LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz