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参数资料
| 型号： | HMC617LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-16 |
| 文件页数： | 3/8页 |
| 文件大小： | 726K |
| 代理商： | HMC617LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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f
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s
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T
7
7 - 3
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
10
12
14
16
18
20
22
24
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
+25 C
+85 C
-40 C
Psat
(dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
10
12
14
16
18
20
22
24
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
+25 C
+85 C
- 40 C
P1dB
(dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Output IP3 and Idd vs.
Supply Voltage @ 700 MHz [3]
[1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K
[3] rbias = 3.92K
[4] measurement reference plane shown on evaluation pCB drawing.
Output IP3 vs. Temperature [1] [2]
24
28
32
36
40
44
48
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
+25 C
+85 C
- 40 C
IP3
(dBm
)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dBm
)
Idd
(mA)
VOLTAGE SUPPLY (V)
Noise Figure vs. Temperature [1] [2] [4]
0
0.2
0.4
0.6
0.8
1
1.2
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
Vdd=5V
Vdd=3V
N
O
IS
E
F
IG
U
R
E
(d
B
)
FREQUENCY (GHz)
+85C
+25 C
-40C
Output IP3 and Idd vs.
Supply Voltage @ 900 MHz [3]
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dBm
)
Idd
(mA)
VOLTAGE SUPPLY (V)
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| HMC617LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier -QFN-16 |
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| HMC618ALP3E | 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.85dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:118mA 测试频率:2.2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1 |
| HMC618ALP3ETR | 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.75dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:89mA 测试频率:1.7GHz ~ 2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT（3x3） 标准包装:1 |
| HMC618LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
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