参数资料
型号: HMC617LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-16
文件页数: 7/8页
文件大小: 726K
代理商: HMC617LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
A
m
p
li
f
ie
r
s
-
lo
w
N
o
is
e
-
s
m
T
7
7 - 7
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
pin Number
function
Description
interface schematic
1, 3 - 5, 7, 9,
10, 12 - 14, 16
N/C
No connection required. These pins may be connected to rf/
DC ground without affecting performance.
2
rfiN
This pin is matched to 50 ohms.
6
GND
This pin and ground paddle must
be connected to rf./DC ground.
11
rfoUT
This pin is matched to 50 ohms.
8
res
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. see application circuit.
15
Vdd
power supply Voltage. Choke inductor and bypass capacitors
are required. see application circuit.
Pin Descriptions
Application Circuit
相关PDF资料
PDF描述
HMC617LP3 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC624LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3.8 dB INSERTION LOSS-MAX
HMC627LP5 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC629LP4E 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 5 dB INSERTION LOSS-MAX
HMC629LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 5 dB INSERTION LOSS-MAX
相关代理商/技术参数
参数描述
HMC617LP3ETR 制造商:Hittite Microwave Corp 功能描述:HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC617 Series 0.55 - 1.2 GHz GaAs SMT PHEMT Low Noise Amplifier -QFN-16
HMC6187LP4E 制造商:COOPER 制造商全称:Cooper Bussmann, Inc. 功能描述:VARIABLE GAIN AMPLIFIER
HMC618ALP3E 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.85dB RF 类型:LTE,WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:118mA 测试频率:2.2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT(3x3) 标准包装:1
HMC618ALP3ETR 功能描述:RF Amplifier IC LTE, WiMax 1.2GHz ~ 2.2GHz 16-SMT (3x3) 制造商:analog devices inc. 系列:- 包装:剪切带(CT) 零件状态:有效 频率:1.2GHz ~ 2.2GHz P1dB:20dBm 增益:23dB 噪声系数:0.75dB RF 类型:LTE,WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:89mA 测试频率:1.7GHz ~ 2GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-SMT(3x3) 标准包装:1
HMC618LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz