参数资料
型号: HMC619
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 3.38 X 2.05 MM, 0.10 MM HEIGHT, DIE-8
文件页数: 4/8页
文件大小: 292K
代理商: HMC619
L
IN
E
A
R
&
P
O
W
E
R
A
M
P
L
IF
IE
R
S
-
C
H
IP
3
3 - 97
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+13 Vdc
Gate Bias Voltage (Vgg1)
-2.5 to 0 Vdc
Gate Bias Voltage (Vgg2)
+4V to +6V
RF Input Power (RFIN)(Vdd = +10 Vdc)
+27 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 98 mW/°C above 85 °C)
6.37 W
Thermal Resistance
(channel to die bottom)
10.2 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (V)
Idd (mA)
+11.5
299
+12.0
300
+12.5
301
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power Compression @ 10 GHz
Power Dissipation
Power Compression @ 2 GHz
Power Compression @ 5 GHz
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
0
4
8
12
16
20
24
28
32
-10
-5
0
5
10
15
20
Pout
Gain
PAE
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
3
4
5
6
7
8
9
10
-10
-5
0
5
10
15
20
Max Pdis @ 85C
2 GHz
6 GHz
POWER
DISSIPATION
(W)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
32
-10
-5
0
5
10
15
20
Pout
Gain
PAE
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
32
-10
-5
0
5
10
15
20
Pout
Gain
PAE
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
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